Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films

The impact factor of ZnSe thin films in an aqueous solution zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with were annealed at 200, 300, 400°C. This research aimed to employed XRD analysis, optical measurements, electrical resistivity measurements study films, respectively. use these complementary techniques allowed for a compressive understanding effect annealing on physical properties films. are oven various temperatures which characterized by structural properties. An increase temperature distorted nanocrystillinity made amorphous. variation indicates semiconducting nature film. decreases increasing temperature. In this study, Band gap from 2.8eV 2.65eV as-deposited 2.5eV. As result is used certain applications, it has been widely utilized optoelectronic devices such as film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, electro-luminescent devices.